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Study on Electrical Properties and Structures of ZTO Thin Films Depending on the Annealing Temperature

  • Industry Promotion Research
  • Abbr : IPR
  • 2016, 1(2), pp.13-17
  • Publisher : Industrial Promotion Institute
  • Research Area : Interdisciplinary Studies > Interdisciplinary Research
  • Received : June 26, 2016
  • Accepted : July 8, 2016
  • Published : July 31, 2016

Jo, Yun Jung 1 HongJu Chae 1 Oh teresa 1

1청주대학교

ABSTRACT

ZTO films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics. The ZTO film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. ZTO became more crystal-structural with increasing the annealing temperature, and the current increased at ZTO film annealed at 150 ℃ with Schottky contact.

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