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Study on Electrical Properties and Structures of SnO2 Thin Films Depending on the Annealing Temperature

  • Industry Promotion Research
  • Abbr : IPR
  • 2016, 1(2), pp.7-11
  • Publisher : Industrial Promotion Institute
  • Research Area : Interdisciplinary Studies > Interdisciplinary Research
  • Received : June 26, 2016
  • Accepted : July 8, 2016
  • Published : July 31, 2016

Yeon, Su Ji 1 Lee, Sung Hee 1 Oh teresa 1

1청주대학교

ABSTRACT

SnO2 films were annealed in a vacuum atmosphere conditions to research the temperature dependency of current-voltage characteristics, crystal structure and chemical properties. The SnO2 film annealed in a vacuum became an amorphous structure, but the degree of amorphous structure changed in accordance with the content of oxygen vacancy, which increased at film annealed at 100℃ and then decreased over the sample at annealed at 150℃. Because the crystallinity was affected the content of oxygen vacancy. The oxygen vacancy as carriers disappeared with increasing the annealing temperatures, and the depletion layer increased. Therefore the content of exiton as optical properties increased with becoming the amorphous structure. So the intensity of PL spectra increased with increasing the annealing temperature.

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