@article{ART003263306},
author={A Hyeon Choi and Ja Hyun Lee},
title={High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends},
journal={Industry Promotion Research},
issn={2466-1139},
year={2025},
volume={10},
number={4},
pages={191-202},
doi={10.21186/IPR.2025.10.4.191}
TY - JOUR
AU - A Hyeon Choi
AU - Ja Hyun Lee
TI - High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends
JO - Industry Promotion Research
PY - 2025
VL - 10
IS - 4
PB - Industrial Promotion Institute
SP - 191
EP - 202
SN - 2466-1139
AB - This paper reviews the structural characteristics and process evolution of High-k/Metal Gate (HKMG) technology, and examines its key technical elements for next-generation semiconductor devices. HKMG has addressed the limitations of conventional polysilicon/SiON gate stacks, contributing to the suppression of leakage current and the enhancement of electrical performance in advanced technology nodes. A comparison between Gate-First and Gate-Last (RMG) approaches highlights their respective process issues and suitability, while the integration potential with highly scaled devices such as FinFETs and Gate-All-Around (GAA) transistors is also evaluated. Furthermore, the advantages and integration opportunities of HKMG in diverse applications—including non-volatile memories, low-power circuits, and 3D integration—are discussed. This paper provides a comprehensive understanding of the process architecture, device integration, reliability assessment, and future directions of HKMG-based semiconductor technology.
KW - High-k/Metal Gate (HKMG);Gate-Last (RMG);FinFET;Gate-All-Around (GAA) FET;BTI;TDDB;HCI
DO - 10.21186/IPR.2025.10.4.191
ER -
A Hyeon Choi and Ja Hyun Lee. (2025). High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends. Industry Promotion Research, 10(4), 191-202.
A Hyeon Choi and Ja Hyun Lee. 2025, "High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends", Industry Promotion Research, vol.10, no.4 pp.191-202. Available from: doi:10.21186/IPR.2025.10.4.191
A Hyeon Choi, Ja Hyun Lee "High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends" Industry Promotion Research 10.4 pp.191-202 (2025) : 191.
A Hyeon Choi, Ja Hyun Lee. High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends. 2025; 10(4), 191-202. Available from: doi:10.21186/IPR.2025.10.4.191
A Hyeon Choi and Ja Hyun Lee. "High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends" Industry Promotion Research 10, no.4 (2025) : 191-202.doi: 10.21186/IPR.2025.10.4.191
A Hyeon Choi; Ja Hyun Lee. High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends. Industry Promotion Research, 10(4), 191-202. doi: 10.21186/IPR.2025.10.4.191
A Hyeon Choi; Ja Hyun Lee. High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends. Industry Promotion Research. 2025; 10(4) 191-202. doi: 10.21186/IPR.2025.10.4.191
A Hyeon Choi, Ja Hyun Lee. High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends. 2025; 10(4), 191-202. Available from: doi:10.21186/IPR.2025.10.4.191
A Hyeon Choi and Ja Hyun Lee. "High-k/Metal Gate (HKMG) Technology: Structural, Process, and Application Trends" Industry Promotion Research 10, no.4 (2025) : 191-202.doi: 10.21186/IPR.2025.10.4.191
