InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and NH3 gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between NH3 and indium-gallium chloride formed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.Key words HVPE, Mixed-source, InGaN, InAlGaN, XPS, CL, PL혼합소스 HVPE에 의해 성장된 In(Al)GaN 층의 특성황선령, 김경화, 장근숙, 전헌수, 최원진, 장지호, 김홍승, 양민, 안형수?, 배종성*, 김석환**한국해양대학교 반도체물리학과, 부산, 606-791*한국기초과학지원연구원 부산분소, 부산 609-735