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@article{ART001020790},
author={SUNLYEONG HWANG and Jiho Chang and Hyung Soo Ahn and Kyoung Hwa Kim and Min Yang and 장근숙 and Hunsoo Jeon and Wonjin Choi and 김흥승 and 배동성 and Kim Suck Whan},
title={Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2006},
volume={16},
number={4},
pages={157-161}

TY - JOUR
AU - SUNLYEONG HWANG
AU - Jiho Chang
AU - Hyung Soo Ahn
AU - Kyoung Hwa Kim
AU - Min Yang
AU - 장근숙
AU - Hunsoo Jeon
AU - Wonjin Choi
AU - 김흥승
AU - 배동성
AU - Kim Suck Whan
TI - Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2006
VL - 16
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 157
EP - 161
SN - 1225-1429
AB - InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and NH3 gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between NH3 and indium-gallium chloride formed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.Key words HVPE, Mixed-source, InGaN, InAlGaN, XPS, CL, PL혼합소스 HVPE에 의해 성장된 In(Al)GaN 층의 특성황선령, 김경화, 장근숙, 전헌수, 최원진, 장지호, 김홍승, 양민, 안형수?, 배종성*, 김석환**한국해양대학교 반도체물리학과, 부산, 606-791*한국기초과학지원연구원 부산분소, 부산 609-735
KW - HVPE;Mixed-source;InGaN;InAlGaN;XPS;CL;PL
DO -
UR -
ER -

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성 and Kim Suck Whan. (2006). Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 16(4), 157-161.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성 and Kim Suck Whan. 2006, "Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.16, no.4 pp.157-161.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성, Kim Suck Whan "Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 16.4 pp.157-161 (2006) : 157.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성, Kim Suck Whan. Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy. 2006; 16(4), 157-161.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성 and Kim Suck Whan. "Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 16, no.4 (2006) : 157-161.

SUNLYEONG HWANG; Jiho Chang; Hyung Soo Ahn; Kyoung Hwa Kim; Min Yang; 장근숙; Hunsoo Jeon; Wonjin Choi; 김흥승; 배동성; Kim Suck Whan. Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 16(4), 157-161.

SUNLYEONG HWANG; Jiho Chang; Hyung Soo Ahn; Kyoung Hwa Kim; Min Yang; 장근숙; Hunsoo Jeon; Wonjin Choi; 김흥승; 배동성; Kim Suck Whan. Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2006; 16(4) 157-161.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성, Kim Suck Whan. Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy. 2006; 16(4), 157-161.

SUNLYEONG HWANG, Jiho Chang, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang, 장근숙, Hunsoo Jeon, Wonjin Choi, 김흥승, 배동성 and Kim Suck Whan. "Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 16, no.4 (2006) : 157-161.