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Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2006, 16(4), pp.162-165
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

장근숙 1 Kyoung Hwa Kim 1 Min Yang 1 Hyung Soo Ahn 1 SUNLYEONG HWANG 1 Hunsoo Jeon 1 Wonjin Choi 1 Kim Suck Whan 2 유재은 3 이수민 3 M. Koike 3

1한국해양대학교
2안동대학교
3삼성전기

Accredited

ABSTRACT

The selective growth of InGaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.Key words HVPE, LED, SAG, EL, I-V, InGaN/AlGaN heterostructure, Multi-sliding boat systemMulti-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종접합구조의 성장장근숙, 김경화?, 황선령, 전헌수, 최원진, 양민, 안형수, 김석환*, 유재은**, 이수민**, M. Koike**한국해양대학교 반도체물리학과, 부산, 606-791*안동대학교 물리학과, 안동, 760-749

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* References for papers published after 2023 are currently being built.