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Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2006, 16(4), pp.162~165
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

장근숙 1,  Kyoung Hwa Kim 1,  Min Yang 1,  Hyung Soo Ahn 1,  SUNLYEONG HWANG 1,  Hunsoo Jeon 1,  Wonjin Choi 1,  Kim Suck Whan 2,  유재은 3,  이수민 3,  M. Koike 3

1한국해양대학교
2안동대학교
3삼성전기

Accredited

ABSTRACT

The selective growth of InGaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.Key words HVPE, LED, SAG, EL, I-V, InGaN/AlGaN heterostructure, Multi-sliding boat systemMulti-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종접합구조의 성장장근숙, 김경화?, 황선령, 전헌수, 최원진, 양민, 안형수, 김석환*, 유재은**, 이수민**, M. Koike**한국해양대학교 반도체물리학과, 부산, 606-791*안동대학교 물리학과, 안동, 760-749

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