Effect of aspect ratio on solutally buoyancy-driven convection in mercurous chloride (Hg2Cl2) crystalgrowth processes

Geug Tae  Kim (김극태); Kyong-Hwan Lee (이경환)

Effect of aspect ratio on solutally buoyancy-driven convection in mercurous chloride (Hg2Cl2) crystalgrowth processes

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2006, 16(4), pp.149-156
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Geug Tae Kim ¹, Kyong-Hwan Lee ²

¹한남대학교
²한국에너지기술연구원

Accredited

ABSTRACT

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, PB = 40 Torr, solutally buoyancy-driven convection (Grs = 3.03 ? 105) due to the disparity in the molecular weights of the component A (Hg2Cl2) and B (He) is stronger than thermally buoyancy-driven convection (Grt = 1.66 ? 104). The crystal growth rate is decreased exponentially for 2.5 ? Ar ? 5, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased for 2 ? Ar ? 3, and remains nearly unchanged for 3 ? Ar ? 5.Key words Mercurous chloride, Solutally buoyancy-driven convection, Aspect ratio, Physical vapor transport1. Introduction

KEYWORDS

Mercurous chloride, Solutally buoyancy-driven convection, Aspect ratio, Physical vapor transport Mercurous chloride, Solutally buoyancy-driven convection, Aspect ratio, Physical vapor transport

Citation status

* References for papers published after 2023 are currently being built.

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[journal] I. Catton / 1972 / Effect of wall conducting on the stability of a fluid in a rectangular region heated from below? Growth rates of Hg2Cl2 as a function of the temperature difference between the source and the crystal region The |U|max as a function of the temperature difference between the source and the crystal region corresponding to Fig Effects of aspect ratio Ar on the crystal growth rates of Hg2Cl2 with the source region of the position fixed The |U|max as a function of the aspect ratio Ar corresponding to Fig Effects of aspect ratio Ar on the crystal growth rates of Hg2Cl2 conducting walls for DT = 27 The |U|max as a function of the aspect ratio Ar corresponding to Fig Growth rates of Hg2Cl2 as a function of the aspect ratio Ar with the crystal region of the position which is fixed Growth rates of Hg2Cl2 as a a function of the temperature difference between the source and the crystal region which corre- sponds to Fig The crystal region of the position is fixed : 32 66 03~1 3

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