@article{ART001041576},
author={송원영 and Hyoungsub Kim and YOON, DAEHO and 신동익 and Hojune Lee and KIM, SANG-WOO},
title={Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2006},
volume={16},
number={6},
pages={256-259}
TY - JOUR
AU - 송원영
AU - Hyoungsub Kim
AU - YOON, DAEHO
AU - 신동익
AU - Hojune Lee
AU - KIM, SANG-WOO
TI - Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2006
VL - 16
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 256
EP - 259
SN - 1225-1429
AB - The amorphous SiOx nanowires were synthesized by the vapor phase epitaxy (VPE) method. SiOx nanowires were formed on silicon wafer of temperatures ranged from 800~1100oC and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous SiOx nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing SiOx nanowires with the length of more than about 10 mm. The SiOx nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.
KW - Nanowires synthesis;Growth mechanism;Vapor phase epitaxy method
DO -
UR -
ER -
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee and KIM, SANG-WOO. (2006). Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate. Journal of the Korean Crystal Growth and Crystal Technology, 16(6), 256-259.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee and KIM, SANG-WOO. 2006, "Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.16, no.6 pp.256-259.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee, KIM, SANG-WOO "Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 16.6 pp.256-259 (2006) : 256.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee, KIM, SANG-WOO. Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate. 2006; 16(6), 256-259.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee and KIM, SANG-WOO. "Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 16, no.6 (2006) : 256-259.
송원영; Hyoungsub Kim; YOON, DAEHO; 신동익; Hojune Lee; KIM, SANG-WOO. Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate. Journal of the Korean Crystal Growth and Crystal Technology, 16(6), 256-259.
송원영; Hyoungsub Kim; YOON, DAEHO; 신동익; Hojune Lee; KIM, SANG-WOO. Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2006; 16(6) 256-259.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee, KIM, SANG-WOO. Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate. 2006; 16(6), 256-259.
송원영, Hyoungsub Kim, YOON, DAEHO, 신동익, Hojune Lee and KIM, SANG-WOO. "Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 16, no.6 (2006) : 256-259.
