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Reflectance spectrum properties of DBR and microcavity porous silicon

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2009, 19(6), pp.293~297
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김영유 1,  김한중 1

1공주대학교

Accredited

ABSTRACT

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

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