Dielectric properties of A-site defect perovskite La1/3NbO3 single crystal (A-자리 결함 perovskite La1/3NbO3 단결정의 유전특성)

Jeong Ho Sohn (손정호)

Dielectric properties of A-site defect perovskite La1/3NbO3 single crystal

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2010, 20(6), pp.249-253
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Jeong Ho Sohn ¹

¹가야대학교

Accredited

ABSTRACT

After the specimen of A-site defect perovskite La1/3NbO3 single crystal was manufactured, the dielectric properties were studied between the temperature range of 10 and 800 K. The dielectric anomaly appeared at 50 K and 650 K, and, at about 650 K, the thermal hysteresis of dielectric constant was shown. The ac-conductivity of bulk showed the lowest activation energy of 0.43 eV at 560~690 K. Based on the results, it is assumed that the dielectric anomaly at 50 K and 650 K was due to the antiparallel shift of Nb 5+-ion and the rearrangement of La 3+-ion, respectively.

KEYWORDS

La1/3NbO3 single crystal, A-site defect perovskite, Dielectric property, ac-conductivity

Citation status

* References for papers published after 2023 are currently being built.

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