@article{ART001507703},
author={정혜정 and Jongho Lee and 부성재},
title={Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2010},
volume={20},
number={6},
pages={254-261}
TY - JOUR
AU - 정혜정
AU - Jongho Lee
AU - 부성재
TI - Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2010
VL - 20
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 254
EP - 261
SN - 1225-1429
AB - Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/Al2O3/a-Si using various thicknesses of Al2O3 layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film defects and the crystal grain size, the Al2O3 layer thickness are varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of Al2O3 layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about 10 μm at relatively thin Al2O3 layer thickness (≤ 16 nm).
The preferential orientation of pc-Si sub-grain was <111>.
KW - Aluminum-induced crystallization (AIC);Amorphous silicon;Crystallization;Poly-crystalline silicon film;Solar cell
DO -
UR -
ER -
정혜정, Jongho Lee and 부성재. (2010). Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication. Journal of the Korean Crystal Growth and Crystal Technology, 20(6), 254-261.
정혜정, Jongho Lee and 부성재. 2010, "Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication", Journal of the Korean Crystal Growth and Crystal Technology, vol.20, no.6 pp.254-261.
정혜정, Jongho Lee, 부성재 "Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication" Journal of the Korean Crystal Growth and Crystal Technology 20.6 pp.254-261 (2010) : 254.
정혜정, Jongho Lee, 부성재. Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication. 2010; 20(6), 254-261.
정혜정, Jongho Lee and 부성재. "Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication" Journal of the Korean Crystal Growth and Crystal Technology 20, no.6 (2010) : 254-261.
정혜정; Jongho Lee; 부성재. Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication. Journal of the Korean Crystal Growth and Crystal Technology, 20(6), 254-261.
정혜정; Jongho Lee; 부성재. Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication. Journal of the Korean Crystal Growth and Crystal Technology. 2010; 20(6) 254-261.
정혜정, Jongho Lee, 부성재. Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication. 2010; 20(6), 254-261.
정혜정, Jongho Lee and 부성재. "Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication" Journal of the Korean Crystal Growth and Crystal Technology 20, no.6 (2010) : 254-261.