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Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2010, 20(6), pp.254-261
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

정혜정 1 Jongho Lee 1 부성재 1

1한국생산기술연구원

Accredited

ABSTRACT

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/Al2O3/a-Si using various thicknesses of Al2O3 layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film defects and the crystal grain size, the Al2O3 layer thickness are varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of Al2O3 layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about 10 μm at relatively thin Al2O3 layer thickness (≤ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

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