@article{ART001613743},
author={Kyoung-Hee Lee},
title={A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2011},
volume={21},
number={6},
pages={225-229}
TY - JOUR
AU - Kyoung-Hee Lee
TI - A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2011
VL - 21
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 225
EP - 229
SN - 1225-1429
AB - Most of the silicon cutting methods using the multi-wire with the slurry injection have been used for wafers of the crystalline solar cell. But the productivity of slurry injection cutting type falls due to low cutting speeds. Also, the direct contact with the metal wire and silicon block increases the concentration of metallic impurities in the wafer’s surface. In addition, the abrasive silicon carbide (SiC) generates pollutants. And production costs are rising because it does not re-use the worn wire. On the other hand, the productivity of the cutting method using the diamond coated wire is about 2 times faster than the slurry injection cutting type. Also, the continuous cutting using the used wire of low wear is possible. And this is a big advantage for reduced production costs. Therefore, the cutting method of the diamond coated wire is more efficient than the slurry injection cutting technique. In this study, each cutting type is analyzed using the surface characteristics of the solar wafer and will describe the effects of the manufacturing process of the solar cell.
Finally, we will suggest improvement methods of the solar cell process for using the diamond cutting type wafer.
KW - Silicon;Silicon wafer;Diamond coated wire;Diamond wire saw;Surface roughness;Metal impurity;Damage depth;Texturing
DO -
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ER -
Kyoung-Hee Lee. (2011). A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application. Journal of the Korean Crystal Growth and Crystal Technology, 21(6), 225-229.
Kyoung-Hee Lee. 2011, "A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application", Journal of the Korean Crystal Growth and Crystal Technology, vol.21, no.6 pp.225-229.
Kyoung-Hee Lee "A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application" Journal of the Korean Crystal Growth and Crystal Technology 21.6 pp.225-229 (2011) : 225.
Kyoung-Hee Lee. A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application. 2011; 21(6), 225-229.
Kyoung-Hee Lee. "A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application" Journal of the Korean Crystal Growth and Crystal Technology 21, no.6 (2011) : 225-229.
Kyoung-Hee Lee. A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application. Journal of the Korean Crystal Growth and Crystal Technology, 21(6), 225-229.
Kyoung-Hee Lee. A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application. Journal of the Korean Crystal Growth and Crystal Technology. 2011; 21(6) 225-229.
Kyoung-Hee Lee. A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application. 2011; 21(6), 225-229.
Kyoung-Hee Lee. "A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application" Journal of the Korean Crystal Growth and Crystal Technology 21, no.6 (2011) : 225-229.
