Fluorine-based inductively coupled plasma etching of ZnO film (ZnO 박막의 fluorine-계 유도결합 플라즈마 식각)

박종천; BYEONG WOO LEE (이병우); KIM BYUNG IK (김병익); Cho, Hyun (조현)

Fluorine-based inductively coupled plasma etching of ZnO film

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2011, 21(6), pp.230-234
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

박종천 ¹, BYEONG WOO LEE ², KIM BYUNG IK ³, Cho, Hyun ¹

¹부산대학교
²한국해양대학교
³한국세라믹기술원

Accredited

ABSTRACT

High density plasma etching of ZnO film was performed in CF4/Ar and SF6/Ar inductively coupled plasmas. Maximum etch rates of ~1950 Å/min and ~1400 Å/min were obtained for 10CF4/5Ar and 10SF6/5Ar ICP discharges,respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the 10CF4/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

KEYWORDS

ZnO film, Inductively coupled plasma etching, CF4/Ar and SF6/Ar, Etch rate, Surface roughness, Etch selectivity

Citation status

* References for papers published after 2023 are currently being built.

[journal] H. Yabuta / 2006 / High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering / Appl. Phys. Lett 89 : 112123~

[journal] S.J. Pearton / 2003 / Recent progress in processing and properties of ZnO / Superlattices and Microstructures 34 : 3~

[journal] T. Gruber / 2003 / Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy / Appl. Phys. Lett 83 : 3290~

[journal] W. Lim / 2006 / Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO / Appl. Surf. Sci 253 : 1269~

[journal] R. Chakraborty / 2009 / Fabrication of ZnO nanorods for optoelectronic device applications / Indian K. Phys 83 : 553~

[journal] F.R. Blom / 1990 / Thinfilm ZnO as microchemical actuator at low frequencies / Sensors and Actuators 226 : 21~23

[book] N. Yamazoe / 1992 / Chemical Sensor Technology Vol. 4 / Kodansa-Elseveir, Tokyo : 19~42

[journal] Z. Fan / 2005 / ZnO nanowire field-effect transistors and oxygen sensing properties / Appl. Phys. Lett 85 : 5923~

[journal] Q. Wan / 2004 / Fabrication and ethnol sensing characteristics of ZnO nanowire gas sensors / Appl. Phys. Lett 84 : 3654~

[journal] P. Parthangal / 2006 / A universal approach to electrically connecting nanowire arrays using nanoparticles -application to a novel gas sensor architecture / Nanotechnology 17 : 3786~

[journal] Y. Cao / 2006 / A technique for controlling the alignment of silver nanowires with an electric field / Nanotechnology 17 : 2378~

[journal] H.C. Kim / 2006 / Parallel patterning of nanoparticles via electrodynamic focusing of charged aerosols / Nature Nanotechnology 1 : 117~

[journal] A. Tsujiko / 2000 / Selective formation of nanoholes with (100)-face walls by photoetching of n-TiO2 (rutile) electrode, accompanied by increases in water-oxidation photocurrent / J. Phys. Chem. B 104 : 4873~

[journal] Jong Cheon Park / 2009 / Anisotropic pattern transfer in SnO2 thin films for the fabrication of nanostructure-based gas sensors / Journal of Ceramic Processing Research / 세라믹공정연구센터 10(6) : 827~831

[confproc] S.A. Akbar / 2006 / Ceramic nanostructures by gas phase reaction / 209th The Electrochemical Society Meeting : 794~

[journal] Y.I. Bang / 2004 / Thin film micro carbon dioxide sensor using MEMS process / SENSORS AND ACTUATORS B-CHEMICAL / ELSEVIER SCIENCE SA 102 : 20~

This paper was written with support from the National Research Foundation of Korea.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19