@article{ART001613753},
author={박종천 and BYEONG WOO LEE and KIM BYUNG IK and Hyun Cho},
title={Fluorine-based inductively coupled plasma etching of ZnO film},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2011},
volume={21},
number={6},
pages={230-234}
TY - JOUR
AU - 박종천
AU - BYEONG WOO LEE
AU - KIM BYUNG IK
AU - Hyun Cho
TI - Fluorine-based inductively coupled plasma etching of ZnO film
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2011
VL - 21
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 230
EP - 234
SN - 1225-1429
AB - High density plasma etching of ZnO film was performed in CF4/Ar and SF6/Ar inductively coupled plasmas.
Maximum etch rates of ~1950 Å/min and ~1400 Å/min were obtained for 10CF4/5Ar and 10SF6/5Ar ICP discharges,respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the 10CF4/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.
KW - ZnO film;Inductively coupled plasma etching;CF4/Ar and SF6/Ar;Etch rate;Surface roughness;Etch selectivity
DO -
UR -
ER -
박종천, BYEONG WOO LEE, KIM BYUNG IK and Hyun Cho. (2011). Fluorine-based inductively coupled plasma etching of ZnO film. Journal of the Korean Crystal Growth and Crystal Technology, 21(6), 230-234.
박종천, BYEONG WOO LEE, KIM BYUNG IK and Hyun Cho. 2011, "Fluorine-based inductively coupled plasma etching of ZnO film", Journal of the Korean Crystal Growth and Crystal Technology, vol.21, no.6 pp.230-234.
박종천, BYEONG WOO LEE, KIM BYUNG IK, Hyun Cho "Fluorine-based inductively coupled plasma etching of ZnO film" Journal of the Korean Crystal Growth and Crystal Technology 21.6 pp.230-234 (2011) : 230.
박종천, BYEONG WOO LEE, KIM BYUNG IK, Hyun Cho. Fluorine-based inductively coupled plasma etching of ZnO film. 2011; 21(6), 230-234.
박종천, BYEONG WOO LEE, KIM BYUNG IK and Hyun Cho. "Fluorine-based inductively coupled plasma etching of ZnO film" Journal of the Korean Crystal Growth and Crystal Technology 21, no.6 (2011) : 230-234.
박종천; BYEONG WOO LEE; KIM BYUNG IK; Hyun Cho. Fluorine-based inductively coupled plasma etching of ZnO film. Journal of the Korean Crystal Growth and Crystal Technology, 21(6), 230-234.
박종천; BYEONG WOO LEE; KIM BYUNG IK; Hyun Cho. Fluorine-based inductively coupled plasma etching of ZnO film. Journal of the Korean Crystal Growth and Crystal Technology. 2011; 21(6) 230-234.
박종천, BYEONG WOO LEE, KIM BYUNG IK, Hyun Cho. Fluorine-based inductively coupled plasma etching of ZnO film. 2011; 21(6), 230-234.
박종천, BYEONG WOO LEE, KIM BYUNG IK and Hyun Cho. "Fluorine-based inductively coupled plasma etching of ZnO film" Journal of the Korean Crystal Growth and Crystal Technology 21, no.6 (2011) : 230-234.
