@article{ART002101611},
author={Kang, Seung-Min},
title={A study on the SiC single crystal growth conditions by the resistance heating method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2016},
volume={26},
number={2},
pages={53-57},
doi={10.6111/JKCGCT.2016.26.2.053}
TY - JOUR
AU - Kang, Seung-Min
TI - A study on the SiC single crystal growth conditions by the resistance heating method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2016
VL - 26
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 53
EP - 57
SN - 1225-1429
AB - 6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growth behavior was different according to the different growth temperatures. It was revealed that the temperatures at the source feeding and at the crystal growth position had to be controlled independently. In this report, the effect of growth temperature on the SiC crystal growth was discussed.
KW - SiC;Resistance heating;Single crystal;Growth behavior;Growth condition
DO - 10.6111/JKCGCT.2016.26.2.053
ER -
Kang, Seung-Min. (2016). A study on the SiC single crystal growth conditions by the resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 53-57.
Kang, Seung-Min. 2016, "A study on the SiC single crystal growth conditions by the resistance heating method", Journal of the Korean Crystal Growth and Crystal Technology, vol.26, no.2 pp.53-57. Available from: doi:10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min "A study on the SiC single crystal growth conditions by the resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 26.2 pp.53-57 (2016) : 53.
Kang, Seung-Min. A study on the SiC single crystal growth conditions by the resistance heating method. 2016; 26(2), 53-57. Available from: doi:10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min. "A study on the SiC single crystal growth conditions by the resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 53-57.doi: 10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min. A study on the SiC single crystal growth conditions by the resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 53-57. doi: 10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min. A study on the SiC single crystal growth conditions by the resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology. 2016; 26(2) 53-57. doi: 10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min. A study on the SiC single crystal growth conditions by the resistance heating method. 2016; 26(2), 53-57. Available from: doi:10.6111/JKCGCT.2016.26.2.053
Kang, Seung-Min. "A study on the SiC single crystal growth conditions by the resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 53-57.doi: 10.6111/JKCGCT.2016.26.2.053
