Growth and characterization of bulk GaN single crystals by basic ammonothermal method (Basic 암모노써멀 방법에 의한 벌크 GaN 단결정의 성장 및 특성)

Jang Bo Shim (심장보); Young Kuk Lee (이영국)

doi:10.6111/JKCGCT.2016.26.2.058

Growth and characterization of bulk GaN single crystals by basic ammonothermal method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(2), pp.58-61
DOI : 10.6111/JKCGCT.2016.26.2.058
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : April 30, 2016

Jang Bo Shim ¹, Young Kuk Lee ¹

¹한국화학연구원

Accredited

ABSTRACT

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from 500~600 o C and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured 1 × 10 5 /cm 2 by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

KEYWORDS

GaN, Ammonothermal growth, Cathodoluminescence, X-ray diffraction rocking curve

Citation status

* References for papers published after 2023 are currently being built.

[book] H. Jacobs / 1982 / Current Topics in Material Science / North-Holland Publishing Co : 383~

[journal] R. Dwiliński / 1995 / GaN synthesis by ammonothermal method / Acta Physica Polonica A 88 : 833~

[journal] R. Kucharski / 2012 / Non-polar and semipolar ammonothermal GaN substrates / Semiconductor Science and Technology 27 : 024007~

[journal] R. Dwilinski / 2011 / Ammonothermal GaN substrates: Growth accomplishments and applications / Physica Status Solidi 208 : 1489~

[journal] D. Ehrentraut / 2013 / High quality, low cost ammonothermal bulk GaN substrates / Jpn. J. Appl. Phys 52 : 08JA01~

[journal] K. Yoshida / 2014 / High-temperature acidic ammonothermal method for GaN crystal growth / J. Crystal Growth 393 : 93~

[journal] B. Wang / 2006 / Ammonothermal growth of GaN crystals in alkaline solutions / J. Crystal Growth 287 : 376~

[journal] R. Dwilinski / 1998 / AMMONO method of BN, AlN and GaN synthesis and crystal growth / MRS Internet J. Nitride Semicond. Res 3 : 25~

[journal] B. Wang / 2006 / Ammonothermal synthesis of III-Nitride crystals / Crystal Growth & Design 6 : 1227~

[journal] M. Callahan / 2006 / GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia / J. Mater. Sci 41 : 1399~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Growth and characterization of bulk GaN single crystals by basic ammonothermal method

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Growth and characterization of bulk GaN single crystals by basic ammonothermal method

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (2)

REFERENCES (10) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.