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Characterization of crack self-healing of silicon carbide by hot press sintering

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2016, 26(2), pp.62~66
  • DOI : 10.6111/JKCGCT.2016.26.2.062
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : March 31, 2016
  • Accepted : April 19, 2016
  • Published : April 30, 2016

Seong-Hoon Kim 1,  Kyounghun Kim 1,  Hwan-Soo Dow 1,  Park Joo-Soek 1,  Kyung-Ja Kim 1,  Kwang Bo Shim 2

1한국세라믹기술원
2한양대학교

Accredited

ABSTRACT

In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with Al2O3 and Y2O3 sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under 1950 o C and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of 3 × 4 × 40 mm, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at 1200~1400 o C for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at 1300 o C for 5 hr.

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