@article{ART002101614},
author={Seong-Hoon Kim and Kyounghun Kim and Hwan-Soo Dow and Park Joo-Soek and Kyung-Ja Kim and Kwang Bo Shim},
title={Characterization of crack self-healing of silicon carbide by hot press sintering},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2016},
volume={26},
number={2},
pages={62-66},
doi={10.6111/JKCGCT.2016.26.2.062}
TY - JOUR
AU - Seong-Hoon Kim
AU - Kyounghun Kim
AU - Hwan-Soo Dow
AU - Park Joo-Soek
AU - Kyung-Ja Kim
AU - Kwang Bo Shim
TI - Characterization of crack self-healing of silicon carbide by hot press sintering
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2016
VL - 26
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 62
EP - 66
SN - 1225-1429
AB - In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with Al2O3 and Y2O3 sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under 1950 o C and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of 3 × 4 × 40 mm, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at 1200~1400 o C for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at 1300 o C for 5 hr.
KW - Silicon carbide;Silicon oxide;Crack-self-healing;Hot press;Oxidation
DO - 10.6111/JKCGCT.2016.26.2.062
ER -
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim and Kwang Bo Shim. (2016). Characterization of crack self-healing of silicon carbide by hot press sintering. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 62-66.
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim and Kwang Bo Shim. 2016, "Characterization of crack self-healing of silicon carbide by hot press sintering", Journal of the Korean Crystal Growth and Crystal Technology, vol.26, no.2 pp.62-66. Available from: doi:10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim, Kwang Bo Shim "Characterization of crack self-healing of silicon carbide by hot press sintering" Journal of the Korean Crystal Growth and Crystal Technology 26.2 pp.62-66 (2016) : 62.
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim, Kwang Bo Shim. Characterization of crack self-healing of silicon carbide by hot press sintering. 2016; 26(2), 62-66. Available from: doi:10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim and Kwang Bo Shim. "Characterization of crack self-healing of silicon carbide by hot press sintering" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 62-66.doi: 10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim; Kyounghun Kim; Hwan-Soo Dow; Park Joo-Soek; Kyung-Ja Kim; Kwang Bo Shim. Characterization of crack self-healing of silicon carbide by hot press sintering. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 62-66. doi: 10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim; Kyounghun Kim; Hwan-Soo Dow; Park Joo-Soek; Kyung-Ja Kim; Kwang Bo Shim. Characterization of crack self-healing of silicon carbide by hot press sintering. Journal of the Korean Crystal Growth and Crystal Technology. 2016; 26(2) 62-66. doi: 10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim, Kwang Bo Shim. Characterization of crack self-healing of silicon carbide by hot press sintering. 2016; 26(2), 62-66. Available from: doi:10.6111/JKCGCT.2016.26.2.062
Seong-Hoon Kim, Kyounghun Kim, Hwan-Soo Dow, Park Joo-Soek, Kyung-Ja Kim and Kwang Bo Shim. "Characterization of crack self-healing of silicon carbide by hot press sintering" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 62-66.doi: 10.6111/JKCGCT.2016.26.2.062