Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite (다공성 흑연 소재를 이용한 바나듐 도핑된 반절연 SiC 단결정 성장의 특성 연구)

Dong-Hun Lee (이동훈); Hwang-Ju Kim (김황주); Young-Gon Kim (김영곤); Su-Hun Choi (최수훈); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Won-Jae Lee (이원재); Kwang-Hee Jung (정광희); Tae-Hee Kim (김태희); Yi-Sik Choi (최이식)

doi:10.6111/JKCGCT.2016.26.6.215

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(6), pp.215~219
DOI : 10.6111/JKCGCT.2016.26.6.215
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : October 6, 2016
Accepted : November 4, 2016
Published : December 31, 2016

Dong-Hun Lee ¹, Hwang-Ju Kim ¹, Young-Gon Kim ¹, Su-Hun Choi ¹, Mi-Seon Park ¹, Yeon-Suk Jang ¹, Won-Jae Lee ¹, Kwang-Hee Jung ², Tae-Hee Kim ², Yi-Sik Choi ²

¹동의대학교
²사파이어테크놀로지

Accredited

ABSTRACT

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium (3-5 × 10 17 cm−3 ) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.

KEYWORDS

Silicon carbide, SiC, PVT, Semi-insulating, Vanadium, Porous graphite

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

ABSTRACT

KEYWORDS

Journal Copyright Policy

Citation status

* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

ABSTRACT

KEYWORDS

Journal Copyright Policy

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