Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite (다공성 흑연 소재를 이용한 바나듐 도핑된 반절연 SiC 단결정 성장의 특성 연구)

Dong-Hun Lee (이동훈); Hwang-Ju Kim (김황주); Young-Gon Kim (김영곤); Su-Hun Choi (최수훈); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Lee, Won Jae (이원재); Kwang-Hee Jung (정광희); Tae-Hee Kim (김태희); Yi-Sik Choi (최이식)

doi:10.6111/JKCGCT.2016.26.6.215

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(6), pp.215-219
DOI : 10.6111/JKCGCT.2016.26.6.215
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : October 6, 2016
Accepted : November 4, 2016
Published : December 31, 2016

Dong-Hun Lee ¹, Hwang-Ju Kim ¹, Young-Gon Kim ¹, Su-Hun Choi ¹, Mi-Seon Park ¹, Yeon-Suk Jang ¹, Lee, Won Jae ¹, Kwang-Hee Jung ², Tae-Hee Kim ², Yi-Sik Choi ²

¹동의대학교
²사파이어테크놀로지

Accredited

ABSTRACT

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium (3-5 × 10 17 cm−3 ) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.

KEYWORDS

Silicon carbide, SiC, PVT, Semi-insulating, Vanadium, Porous graphite

Citation status

* References for papers published after 2023 are currently being built.

[journal] N. Ohtani / 2002 / Growth of large high-quality SiC single crystals / J. Cryst. Growth 237-239 : 1180~

[journal] A. Gupta / 2012 / Status of large diameter SiC single crystals / Mater. Sci. Forum 717-720 : 3~

[journal] St. G. Muller / 2002 / High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production / Mat. Sci. Forum 389-393 : 23~

[journal] M. Bickermann / 2002 / On the preparation of vanadium-doped semi-insulating SiC bulk crystals / Mater. Sci. Forum 389-393 : 139~

[book] S. Nishino / 1992 / Amorphous and crystalline silicon carbide III, Vol. 56 / Springer-Verlag : 15~

[journal] M. Bickermann / 2003 / On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield / J. Cryst. Growth 254 : 390~

[journal] M. Bickermann / 2001 / Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals / J. Cryst. Growth 233 : 211~

[journal] H.J. Lee / 2015 / Effect of porous graphite for high quality SiC crystal growth by PVT method / Mater. Sci. Forum 821-823 : 43~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (0)

REFERENCES (8) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.