2016, Vol.26, No.6

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

pISSN : 1225-1429 / eISSN : 2234-5078
https://journal.kci.go.kr/jkcgct

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium (3-5 × 10 17 cm−3 ) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.

Anti-reflection (AR) thin films were fabricated on a glass substrate by using an ultrasonic spray. Glycidoxypropyl trimethoxysilane (GPTMS) and tetraethyl orthosilicate (TEOS) were used to synthesize a sol-gel hybrid coating solution. The moving speed of spray nozzle was changed from 15~25 mm/s to control the coating thickness of AR thin film. As the moving speed of spray nozzle increased, the thickness of AR thin film decreased from 138 nm to 86 nm. When the AR thin film was fabricated by nozzle moving speed of 20 mm/s, the refractive index and thickness of AR thin film was measured to be 1.31 and 104 nm, respectively. The average reflectance and transmittance of AR thin film coating glass was measured to be 0.75 % and 94 %, respectively into the visible light range of 380~780 nm.

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by E(Γ) with a considerable distance from the E(L) and E(X), however, E(Γ) approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.