@article{ART003053525},
author={Hui-Yeon Jang and Su-Min Choi and Mi-Seon Park and Gwang-Hee Jung and Jin-Ki Kang and Tae-Kyung Lee and Hyoung-Jae Kim and Lee, Won Jae},
title={Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={1},
pages={1-7},
doi={10.6111/JKCGCT.2024.34.1.001}
TY - JOUR
AU - Hui-Yeon Jang
AU - Su-Min Choi
AU - Mi-Seon Park
AU - Gwang-Hee Jung
AU - Jin-Ki Kang
AU - Tae-Kyung Lee
AU - Hyoung-Jae Kim
AU - Lee, Won Jae
TI - Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 7
SN - 1225-1429
AB - β-Ga₂O₃ is a material with a wide band gap of ~4.8eV and a high breakdown-voltage of 8MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ singlecrystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, 201) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will playan important role in improving device performance and reliability.
KW - β-Ga₂O₃;Edge-defined film-fed growth;Multi-slit die;Properties analysis
DO - 10.6111/JKCGCT.2024.34.1.001
ER -
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim and Lee, Won Jae. (2024). Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure. Journal of the Korean Crystal Growth and Crystal Technology, 34(1), 1-7.
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim and Lee, Won Jae. 2024, "Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.1 pp.1-7. Available from: doi:10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim, Lee, Won Jae "Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure" Journal of the Korean Crystal Growth and Crystal Technology 34.1 pp.1-7 (2024) : 1.
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim, Lee, Won Jae. Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure. 2024; 34(1), 1-7. Available from: doi:10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim and Lee, Won Jae. "Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure" Journal of the Korean Crystal Growth and Crystal Technology 34, no.1 (2024) : 1-7.doi: 10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Gwang-Hee Jung; Jin-Ki Kang; Tae-Kyung Lee; Hyoung-Jae Kim; Lee, Won Jae. Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure. Journal of the Korean Crystal Growth and Crystal Technology, 34(1), 1-7. doi: 10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Gwang-Hee Jung; Jin-Ki Kang; Tae-Kyung Lee; Hyoung-Jae Kim; Lee, Won Jae. Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(1) 1-7. doi: 10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim, Lee, Won Jae. Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure. 2024; 34(1), 1-7. Available from: doi:10.6111/JKCGCT.2024.34.1.001
Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Tae-Kyung Lee, Hyoung-Jae Kim and Lee, Won Jae. "Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure" Journal of the Korean Crystal Growth and Crystal Technology 34, no.1 (2024) : 1-7.doi: 10.6111/JKCGCT.2024.34.1.001
