@article{ART002974341},
author={Hyun-Seob Lee},
title={An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory},
journal={Journal of Internet of Things and Convergence},
issn={2466-0078},
year={2023},
volume={9},
number={3},
pages={81-86},
doi={10.20465/KIOTS.2023.9.3.081}
TY - JOUR
AU - Hyun-Seob Lee
TI - An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory
JO - Journal of Internet of Things and Convergence
PY - 2023
VL - 9
IS - 3
PB - The Korea Internet of Things Society
SP - 81
EP - 86
SN - 2466-0078
AB - SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.
KW - memory;nand flash memory;multi level cell;single level cell;lifetime
DO - 10.20465/KIOTS.2023.9.3.081
ER -
Hyun-Seob Lee. (2023). An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory. Journal of Internet of Things and Convergence, 9(3), 81-86.
Hyun-Seob Lee. 2023, "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory", Journal of Internet of Things and Convergence, vol.9, no.3 pp.81-86. Available from: doi:10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory" Journal of Internet of Things and Convergence 9.3 pp.81-86 (2023) : 81.
Hyun-Seob Lee. An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory. 2023; 9(3), 81-86. Available from: doi:10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee. "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory" Journal of Internet of Things and Convergence 9, no.3 (2023) : 81-86.doi: 10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee. An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory. Journal of Internet of Things and Convergence, 9(3), 81-86. doi: 10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee. An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory. Journal of Internet of Things and Convergence. 2023; 9(3) 81-86. doi: 10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee. An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory. 2023; 9(3), 81-86. Available from: doi:10.20465/KIOTS.2023.9.3.081
Hyun-Seob Lee. "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory" Journal of Internet of Things and Convergence 9, no.3 (2023) : 81-86.doi: 10.20465/KIOTS.2023.9.3.081
