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An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory

  • Journal of Internet of Things and Convergence
  • Abbr : JKIOTS
  • 2023, 9(3), pp.81-86
  • DOI : 10.20465/KIOTS.2023.9.3.081
  • Publisher : The Korea Internet of Things Society
  • Research Area : Engineering > Computer Science > Internet Information Processing
  • Received : April 10, 2023
  • Accepted : June 14, 2023
  • Published : June 30, 2023

Hyun-Seob Lee 1

1백석대학교

Accredited

ABSTRACT

SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

Citation status

* References for papers published after 2023 are currently being built.