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Comparison between the Electrical Properties and Structures after Atmosphere Annealing and Vacuum Annealing of IGZO Thin Films

  • Industry Promotion Research
  • Abbr : IPR
  • 2016, 1(1), pp.7-11
  • Publisher : Industrial Promotion Institute
  • Research Area : Interdisciplinary Studies > Interdisciplinary Research
  • Received : December 28, 2015
  • Accepted : January 11, 2016
  • Published : January 31, 2016

Ann, Young Deuk 1 Yeon, Jae Ho 1 Oh teresa 1

1청주대학교

ABSTRACT

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

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